Electronic structure of indium tin oxide/nanocrystalline TiO2 interfaces as used in dye-sensitized solar cell devices
Electronic structure of indium tin oxide/nanocrystalline TiO2 interfaces as used in dye-sensitized solar cell devices
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DOI：
10.1063/1.3596544
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发表时间：
2011-06
影响因子：
3.2
通讯作者：
S. Gutmann;M. Wolak;M. Conrad;M. Beerbom;R. Schlaf
中科院分区：
文献类型：
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作者：
S. Gutmann;M. Wolak;M. Conrad;M. Beerbom;R. Schlaf
染料敏化太阳能电池通常是在环境条件下制备的，在制造过程中不可避免地会引入污染。为此，利用光电发射光谱（PES）研究了环境污染物存在下氧化铟锡(ITO)/纳米晶二氧化钛（TiO2）界面的电子结构和电荷注入特性。在环境条件下，将TiO2纳米颗粒原位多步电喷涂薄膜沉积在事先在溶剂中清洗过的ITO衬底上，形成界面。在沉积步骤之间，用PES对样品进行了表征，得到了ITO/TiO2界面上的能带线。此外，还测定了TiO2层退火前后的能带排列。这些测量结果的共同之处在于，氧化物的价带之间只有很小的电荷注入势垒（~ 0-0.2 eV），但从TiO2到ITO的电子注入势垒（~ 0.3-0.5 eV）更为显著。
Dye-sensitized solar cells are typically prepared under ambient conditions and contamination is inevitably introduced during the fabrication process. Hence, the electronic structure and charge injection properties of the indium tin oxide (ITO)/nanocrystalline titanium dioxide (TiO2) interface was studied by photoemission spectroscopy (PES) in the presence of environmental contaminants. The interface was formed by in situ multi-step electrospray thin film deposition of TiO2 nanoparticles onto ITO substrates cleaned prior in solvent under ambient conditions. In between deposition steps, the samples were characterized with PES yielding the band line-up at the ITO/TiO2 interface. In addition, the band line-up before and after annealing of the TiO2 layer was determined. The results of these measurements have in common that there are only small charge injection barriers between the valence bands of the oxides (∼0–0.2 eV), but more significant barriers for electron injection from TiO2 to ITO (∼0.3–0.5 eV), which...