Optical properties of boron carbide (B5C) thin films fabricated by plasma‐enhanced chemical‐vapor deposition
Optical properties of boron carbide (B5C) thin films fabricated by plasma‐enhanced chemical‐vapor deposition
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等离子体增强化学气相沉积碳化硼（B5C）薄膜的光学性质
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
P. Dowben
中科院分区：
文献类型：
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作者：
Ahmad A. Ahmad;N. Ianno;P. G. Snyder;D. Welipitiya;D. Byun;P. Dowben
用变入射角椭圆偏振光谱仪测量了等离子体增强化学气相沉积在玻璃和n型Si(111)衬底上沉积的碳化硼(B5C)薄膜的带边光学常数。折射率n、消光系数k和吸收系数在1.24 eV到4 eV的光子能谱中都有报道。对硅基B5C薄膜的椭偏分析表明，硅基B5C薄膜是一种梯度材料，而玻璃上B5C薄膜的光学常数是均匀的。对玻璃表面薄膜吸收数据的线形分析表明，在约0.75 eV处有一个间接跃迁，在约1.5 eV处有一个直接跃迁。用变入射角椭圆偏振光谱仪测量了等离子体增强化学气相沉积沉积在玻璃和n型Si(111)上的碳化硼(B5C)薄膜带边附近的光学常数。折射率n、消光系数k和吸收系数在1.24 eV到4 eV的光子能谱中都有报道。对硅基B5C薄膜的椭偏分析表明，硅基B5C薄膜是一种梯度材料，而玻璃上B5C薄膜的光学常数是均匀的。对玻璃表面薄膜吸收数据的线形分析表明，在约0.75 eV处发生间接跃迁，在约1.5 eV处发生直接跃迁。
Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n‐type Si(111) via plasma‐enhanced chemical‐vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV.Variable angle of incidence spectroscopic ellipsometry was used to determine the optical constants near the band edge of boron carbide (B5C) thin films deposited on glass and n‐type Si(111) via plasma‐enhanced chemical‐vapor deposition. The index of refraction n, the extinction coefficient k, and the absorption coefficient are reported in the photon energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C films on silicon indicates a graded material, while the optical constants of B5C on glass are homogeneous. Line shape analyses of absorption data for the films on glass indicate an indirect transition at approximately 0.75 eV and a direct transition at about 1.5 eV.