Polarization-independent quantum-confined Stark effect in an InGaAs/InP tensile-strained quantum well
Polarization-independent quantum-confined Stark effect in an InGaAs/InP tensile-strained quantum well
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DOI：
10.1109/3.283807
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发表时间：
1994-02
影响因子：
2.5
通讯作者：
T. Aizawa;K. G. Ravikumar;S. Suzaki;T. Watanabe;R. Yamauchi
中科院分区：
文献类型：
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作者：
T. Aizawa;K. G. Ravikumar;S. Suzaki;T. Watanabe;R. Yamauchi
我们对 InGaAs/InP 量子阱结构中量子限制斯塔克效应引起的折射率变化和吸收变化的偏振相关特性的控制进行了理论分析和实验研究。量子阱中重空穴和轻空穴态的能级分裂引起的偏振依赖性可以通过在量子阱中引入适当量的拉伸应变来控制。在整个光谱范围（即接近和低于跃迁能）内，对无应变、0.15%、0.3% 和 0.45% 拉伸应变 11.5 nm 厚的 InGaAs 量子阱结构的折射率变化和吸收变化的偏振依赖性进行了测量。我们发现，通过在 11.5 nm 量子阱中引入 0.3% 的拉伸应变，横向电模式和横向磁模式的光谱分布变得更加接近，两种模式对应的负折射率变化峰值出现在同一波长处，其绝对值略有不同。此外，在长波长区域，两种模式的折射率变化在波长上以及绝对值上都是一致的。基于这些结果，我们制造了吸收调制器并控制了相对于入射光偏振的调制特性。 >
We present a theoretical analysis and experimental studies on the control of the polarization-dependent characteristics of the refractive index change and the absorption change due to the quantum-confined Stark effect in an InGaAs/InP quantum-well structure. The polarization dependency which arises from the energy level splitting of heavy-hole and light-hole states in the quantum well can be controlled by inducing an appropriate amount of tensile strain in the quantum well. Measurements were carried out on the polarization dependency of the refractive index change and the absorption change in unstrained, 0.15, 0.3, and 0.45% tensile-strained 11.5-nm-thick InGaAs quantum-well structures through the whole spectral range, i.e., near and below the transition energy. We found that by inducing a 0.3% tensile strain in the 11.5-nm quantum well, the spectral profiles for the transverse electric and the transverse magnetic modes are brought closer to each other, with the peaks of the negative index changes corresponding to both modes occurring at the same wavelength with a slight difference in their absolute values. Moreover, in the long wavelength region, the refractive index change for both modes coincides in the wavelength as well as the absolute value. Based on these results, we have fabricated an absorption modulator and controlled the modulation characteristics with respect to the incident light polarization. >