Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.
Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.
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DOI：
10.1021/acsami.7b08961
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发表时间：
2017-09
影响因子：
9.5
通讯作者：
Yan Zhou;Julian Anaya;J. Pomeroy;Huarui Sun;X. Gu;A. Xie;E. Beam;M. Becker;T. Grotjohn;Cathy Lee;Martin Kuball
中科院分区：
文献类型：
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作者：
Yan Zhou;Julian Anaya;J. Pomeroy;Huarui Sun;X. Gu;A. Xie;E. Beam;M. Becker;T. Grotjohn;Cathy Lee;Martin Kuball
可以通过降低GaN/金刚石界面的有效边界热阻（TBReff）来增强金刚石上GaN器件的冷却。该界面的热性能和使用SiN和AlN阻挡层生长到GaN上的多晶金刚石，以及在不同的生长条件下没有任何阻挡层的研究和系统的比较第一次。TBReff值与透射电子显微镜分析相关，表明通过使用具有形成的平滑界面的SiO2 SiN阻挡层获得了最低的报告TBReff（约6.5 m2 K/GW），而金刚石在GaN上的直接生长由于形成粗糙界面而导致TBReff高出一到两个数量级。在某些情况下，AlN阻挡层可以产生与SiN阻挡层一样低的TBReff;然而，它们的TBReff相当依赖于生长条件。我们还观察到随着生长温度的升高，金刚石的热阻降低。
GaN-on-diamond device cooling can be enhanced by reducing the effective thermal boundary resistance (TBReff) of the GaN/diamond interface. The thermal properties of this interface and of the polycrystalline diamond grown onto GaN using SiN and AlN barrier layers as well as without any barrier layer under different growth conditions are investigated and systematically compared for the first time. TBReff values are correlated with transmission electron microscopy analysis, showing that the lowest reported TBReff (∼6.5 m2 K/GW) is obtained by using ultrathin SiN barrier layers with a smooth interface formed, whereas the direct growth of diamond onto GaN results in one to two orders of magnitude higher TBReff due to the formation of a rough interface. AlN barrier layers can produce a TBReff as low as SiN barrier layers in some cases; however, their TBReff are rather dependent on growth conditions. We also observe a decreasing diamond thermal resistance with increasing growth temperature.