Plasmonic properties of film over nanowell surfaces fabricated by nanosphere lithography
Plasmonic properties of film over nanowell surfaces fabricated by nanosphere lithography
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DOI：
10.1021/jp0545400
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发表时间：
2005-12-01
影响因子：
3.3
通讯作者：
Van Duyne, RP
中科院分区：
文献类型：
--
作者：
Hicks, EM;Zhang, XY;Van Duyne, RP
在这项工作中，详细和系统地研究了纳米孔表面的新型薄膜的等离子体特性。采用纳米球光刻和反应离子刻蚀法制备了这些纳米结构，并用原子力显微镜和扫描电镜对其结构进行了表征。所得到的结构在反射光谱中显示出非常窄的等离子体带（小至0.10 eV），并且比其他纳米颗粒系统对外部介电环境的灵敏度更高，从而改善了性能图（FOM =折射率灵敏度（eV））。RIU（-1) /半最大值全宽度（eV））用于折射率传感。在周期边界条件下，利用离散偶极子近似代码对这些纳米结构的等离子体谱进行了理论建模。模拟结果在等离子体线形状随纳米孔间距和介质环境的变化方面与实测结果吻合较好。
In this work, a detailed and systematic study of the plasmonic properties of a novel film over nanowell surface is investigated. These nanostructures are fabricated using nanosphere lithography and reactive ion etching and structurally characterized by AFM and SEM. The resulting structures show remarkably narrow plasmon bands in reflectance spectra (as little as 0.10 eV) and greater sensitivity to external dielectric environment than has been seen in other nanoparticle systems, resulting in an improvement in the figure of merit (FOM = refractive index sensitivity (eV(.)RIU(-1))/full width at half-maximum (eV)) for refractive index sensing. Theoretical modeling for the plasmon spectra of these nanostructures is done using discrete dipole approximation code under periodic boundary conditions. The modeling results match the measurements accurately in aspects of the variation of the plasmon line shape with altering internanowell distance and dielectric environment.