Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
Design and Simulation of High Performance Lattice Matched Double Barrier Normally Off AlInGaN/GaN HEMTs
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DOI：
10.1109/jeds.2020.3014252
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发表时间：
2020-01-01
影响因子：
2.3
通讯作者：
Samukawa, Seiji
中科院分区：
文献类型：
--
作者：
Shrestha, Niraj Man;Li, Yiming;Samukawa, Seiji
通过求解一组热力学输运方程，设计并模拟了一种新型晶格匹配双势垒Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN常关高电子迁移率晶体管（HEMT）。使用经过实验校准的物理模型，考虑到表面粗糙度导致的轴承迁移率下降，该器件的凹进栅极和双势垒实现了 1149 mA/mm 的最大漏极电流密度 (I-D,I-max) 和 358 mS/mm 的最大跨导 (g(m,max))，正阈值电压 (Vth) 为 0.2 V。第一势垒的小极化电荷负责正 Vth。双势垒 HEMT 在高栅极偏压条件下的 I-DS,I-max 是由于来自上部 2DEG 的电子注入所致，这在较低栅极电压下几乎是不可能的，因为穿过势垒的能量不足。低栅极偏压 V-G = 1V 时 g(m) 曲线中的第二个峰值进一步支持了电子的注入。这项研究的结果表明，所提出的器件将有利于高频和高功率电子应用。
A novel lattice matched double barrier Al0.72In0.16Ga0.12N/Al0.18In0.04Ga0.78N/GaN normally-off high electron mobility transistor (HEMT) is designed and simulated by solving a set of thermodynamic transport equations. Using the experimentally calibrated physical models with bearing mobility degradation by surface roughness in account, the recess gate and double barrier of the proposed device achieves a maximum drain current density (I-D,I-max) of 1149 mA/mm and a maximum transconductance (g(m,max)) of 358 mS/mm with a positive threshold voltage (Vth) of 0.2 V. The small polarization charge of first barrier is responsible for positive Vth. I-DS,I-max in the double barrier HEMT at high gate bias condition is due to injection of electrons from upper 2DEG which is almost impossible at lower gate voltage because of insufficient energy to cross the barrier. The injection of electrons is further supported by the second peak in the g(m) curve at low gate bias V-G = 1V. The outcome of this study suggests that the proposed device will be beneficial for high-frequency and high-power electronic applications.