Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation
Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation
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DOI：
10.1088/1674-1056/18/10/061
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发表时间：
2009-10
影响因子：
1.7
通讯作者：
G. Hui;Yue-Hu Wang;Yu-Ming Zhang;Da-yong Qiao;Yimen Zhang
中科院分区：
文献类型：
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作者：
G. Hui;Yue-Hu Wang;Yu-Ming Zhang;Da-yong Qiao;Yimen Zhang
本文通过在金属触点/SiC界面处形成具有窄带隙的中间半导体层（ISL），实现了一种制备低阻SiC欧姆触点的新方法。在硅面P型4H-SiC薄膜中注入P+离子形成的n阱上形成了一系列传递长度法（TLM）测试图案。在SiC中注入锗离子，可以形成镍金属欧姆触点与n型4H-SiC之间的ISL。在800℃N2中退火3 min后，其接触电阻ρc低至4.23 × 10−5 Ωcm2，远低于典型的SiC金属化工艺（> 900℃）。植入层的片层电阻Rsh为1.5 kΩ/□。利用光刻胶转化纳米晶石墨的技术，在注入Ge离子后的退火过程中保护碳化硅表面。
By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρc as low as 4.23 × 10−5 Ωcm2 is achieved after annealing in N2 at 800 °C for 3 min, which is much lower than that (> 900 °C) in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge+ ion implantations.