IDDQ trending as a precursor to semiconductor failure
IDDQ trending as a precursor to semiconductor failure
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IDDQ 趋势为半导体故障的先兆
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
M. Pecht
中科院分区：
文献类型：
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作者：
Guangfan Zhang;D. Das;R. Xu;M. Pecht
机载电子系统几乎已经在军用和商用飞机上的任何地方使用。由于场效应晶体管(FET)是电子系统及其组件的组成部分，因此对潜在的FET系统故障的诊断和预测对飞行和地勤人员至关重要。在本文中，我们开发了一种基于直接漏极静态电流(IDDQ)测试技术的电位场效应晶体管(FET)故障预测方法。为了预测基于FET的器件的剩余使用寿命(RUL)，对FET进行了彻底的失效机制研究，以选择与IDDQ信号相关的导致逐渐退化的失效机制的子集。在选定故障机理的基础上，利用基于符号动力学的方法进行故障退化状态估计，并采用一种新的不确定性调整预测方法(UAP)进行不确定性管理的RUL预测。最后，使用开发的2-D/3-D模拟模型对预测方法进行了验证。
Airborne electronic systems have been used virtually everywhere on board military and commercial aircraft. Since Field Effect Transistors (FETs) are building blocks for the electronic systems and their components, the diagnosis and prognosis of potential FET system failures are critical to the flight and ground crew. In this paper, we developed an advanced prognostic methodology based on the Direct Drain Quiescent Current (IDDQ) testing technique for potential Field Effect Transistors (FETs) failures. To predict the Remaining useful life (RUL) of the FET-based devices, a thorough failure mechanism study for FETs was performed in order to select a subset of failure mechanisms that cause progressive degradation and relate with IDDQ signals. With the selected failure mechanisms, we utilized the symbolic dynamics-based method to perform the fault degradation status estimation and a novel Uncertainty Adjusted Prognostics (UAP) method to predict the RUL with uncertainty management. Finally, the prognostic methodology was verified using developed 2-D/3-D simulation models.