Characterization of Effective Mobility and Its Degradation Mechanism in MoS2 MOSFETs
Characterization of Effective Mobility and Its Degradation Mechanism in MoS2 MOSFETs
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DOI：
10.1109/tnano.2016.2570280
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发表时间：
2016-05
影响因子：
2.4
通讯作者：
T. Mori;N. Ninomiya;T. Kubo;N. Uchida;E. Watanabe;D. Tsuya;S. Moriyama;Masatoshi Tanaka;A. Ando
中科院分区：
文献类型：
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作者：
T. Mori;N. Ninomiya;T. Kubo;N. Uchida;E. Watanabe;D. Tsuya;S. Moriyama;Masatoshi Tanaka;A. Ando
研究了带有HFO2/棕褐色门的顶部门控MOS2金属氧化物 - 氧化物 - 氧化物 - 氧化型晶体效应晶体管（MOSFET）。我们提出了一个模型，以有效地在MOS2 MOSFET中迁移并讨论其有用性。所提出的有效迁移率模型的参数拟合使人们可能会讨论散射机制如何限制有效迁移率。假定带电的杂质，声子和表面粗糙度是散射的可能原因，并且还考虑了接触电阻的影响。在表现出17.4 cm2/vs的较好移动性的设备中，由声子辅助跳车运输可能限制了移动性。相比之下，在该设备中显示出2.8 cm2 /vs的迁移率较差，由带电杂质引起的散射占主导地位。提出的模型促进了MOS2晶体管在室温下的载体传输特性的设备对设备比较，并加速了它们的进一步发展。
Effective mobility in top-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) with HfO2/TaN gates was investigated. We propose a model for effective mobility in MoS2 MOSFETs and discuss its usefulness. Parameter fitting of the proposed effective mobility model makes possible a discussion of how the scattering mechanism limits the effective mobility. Charged impurities, phonons, and surface roughness were presumed to be possible causes of scattering, and the effect of contact resistance was also taken into account. In the device exhibiting the better mobility of 17.4 cm2/Vs, phonon-assisted hopping carrier transport probably limited the mobility. In contrast, in the device exhibiting the worse mobility of 2.8 cm2 /Vs, scattering caused by charged impurities dominated the transport characteristics. The proposed model facilitates device-to-device comparisons of carrier transport characteristics of MoS2 transistors at room temperature and accelerates their further development.