Ferromagnetism in cobalt-doped n-GaN
Ferromagnetism in cobalt-doped n-GaN
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DOI：
10.1063/1.2194347
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发表时间：
2006-04
影响因子：
4
通讯作者：
S. Dhara;B. Sundaravel;K. Nair;R. Kesavamoorthy;M. C. Valsakumar;T. Rao;L. C. Chen;K. H. Chen
中科院分区：
文献类型：
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作者：
S. Dhara;B. Sundaravel;K. Nair;R. Kesavamoorthy;M. C. Valsakumar;T. Rao;L. C. Chen;K. H. Chen
报道了Co ~+注入形成的Co掺杂n-GaN退火后样品的铁磁有序性。当原子分数为8at.%时，样品的最高居里温度为250 K粒子诱导的X射线发射沟道研究证实了Ga晶格位置的替代Co。利用拉曼光谱研究了磁性杂质周围原子的局域排列。一个无序的模型与载体介导耦合的本地化磁矩负责所观察到的铁磁有序。
Ferromagnetic ordering is reported in the postannealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ∼250K is recorded for the sample with 8at.% Co. Particle induced x-ray emission–channeling study confirmed the substitutional Co in Ga lattice site. Local atomic arrangement around magnetic impurities is also analyzed using Raman study. A disordered model with carrier mediated coupling of localized magnetic moments is made responsible for the observed ferromagnetic ordering.