Encapsulation of an Integrated Neural Interface Device With Parylene C
Encapsulation of an Integrated Neural Interface Device With Parylene C
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DOI：
10.1109/tbme.2008.2002155
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发表时间：
2009-01-01
影响因子：
4.6
通讯作者：
Solzbacher, Florian
中科院分区：
文献类型：
--
作者：
Hsu, Jui-Mei;Rieth, Loren;Solzbacher, Florian
电子神经接口已经被开发出来，用于恢复神经系统疾病患者的神经系统功能。需要保形和长期稳定的电介质封装来保护神经接口装置免受恶劣的生理环境的影响并定位有源电极尖端。利用阻抗谱和漏电流测量研究了化学气相沉积Parylene-C薄膜作为潜在的可植入电介质封装材料。这两项测试都是在37摄氏度的盐水溶液中进行的，结果表明，薄膜提供了一年以上的电绝缘封装。比较了各向同性和各向异性氧等离子体蚀刻工艺用于去除Parylene-C绝缘体以暴露有源电极尖端。此外，还确定了头端暴露与电极阻抗之间的关系。使用光学显微镜评估Parylene-C涂层的一致性和均匀性，并观察到复杂的3-D电极阵列上的小厚度变化。发现聚对二甲苯C提供了一年以上的神经接口装置所需的封装和电绝缘。此外，发现氧等离子体蚀刻是蚀刻和图案化Parylene-C膜的有效方法。
Electronic neural interfaces have been developed to restore function to the nervous system for patients with neural disorders. A conformal and chronically stable dielectric encapsulation is required to protect the neural interface device from the harsh physiological environment and localize the active electrode tips. Chemical vapor deposited Parylene-C films were studied as a potential implantable dielectric encapsulation material using impedance spectroscopy and leakage current measurements. Both tests were performed in 37 degrees C saline solution, and showed that the films provided an electrically insulating encapsulation for more than one year. Isotropic and anisotropic oxygen plasma etching processes were compared for removing the Parylene-C insulation to expose the active electrode tips. Also, the relationship between tip exposure and electrode impedance was determined. The conformity and the uniformity of the Parylene-C coating were assessed using optical microscopy, and small thickness variations on the complex 3-D electrode arrays were observed. Parylene C was found to provide encapsulation and electrical insulation required for such neural interface devices for more than one year. Also, oxygen plasma etching was found to be an effective method to etch and pattern Parylene-C films.