Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys
Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys
复制标题
III-N-V 半导体合金的原子氢辐照晶格弛豫
DOI：
--
复制
发表时间：
2003
期刊：
影响因子：
--
通讯作者：
M. Capizzi
中科院分区：
文献类型：
--
作者：
A. Polimeni;G. Ciatto;L. Ortega;F. Jiang;F. Boscherini;F. Filippone;A. A. Bonapasta;M. Stavola;M. Capizzi
研究了掺氢对In xGa 12 xAs 12 yNy/GaAs异质结构晶格性质的影响。在氢化GaAs 12 yNy和InxGa 12 xAs 12 yNy的光致发光光谱中观察到的带隙加宽伴随着晶格沿生长方向沿着膨胀，如通过X射线衍射测量的。在同一时间，远红外光谱表明，在472厘米21的Ga-N本地振动模式消失后，氢照射。所有这些效果都逆转后，氢从氢化样品通过热退火。最后，第一性原理计算表明，一个相同的二氢复合物是负责的带隙重新开放和氢化的InxGa 12 xAs 12 yNy的晶格膨胀。
We study the effect of hydrogen incorporation on the lattice properties of In xGa12xAs12yNy /GaAs heterostructures. The band gap widening observed in the photoluminescence spectra of hydrogenated GaAs12yNy and InxGa12xAs12yNy is accompanied by a lattice expansion along the growth direction, as measured by x-ray diffraction. At the same time, far-infrared spectroscopy reveals that a Ga-N local vibrational mode at ;472 cm 21 disappears upon hydrogen irradiation. All these effects are reversed upon hydrogen removal from the hydrogenated samples by thermal annealing. Finally, first-principles calculations indicate that a same dihydrogen complex is responsible for both the band gap reopening and the lattice expansion of hydrogenated InxGa12xAs12yNy .