Origin of Carrier-Type Reversal in Pb−Ge−Se Glasses: A Detailed Thermal, Electrical, and Structural Study§
Origin of Carrier-Type Reversal in Pb−Ge−Se Glasses: A Detailed Thermal, Electrical, and Structural Study§
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Pb−Ge−Se 玻璃中载流子类型反转的起源:详细的热、电和结构研究§
DOI:
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发表时间:
1997
期刊:
影响因子:
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通讯作者:
K. Rao
中科院分区:
文献类型:
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作者:
B. Vaidhyanathan;S. Murugavel;S. Asokan;K. Rao
A long-standing and important problem in glass science has been carrier-type reversal (CTR) in semiconducting glasses. This phenomenon is exhibited by Pb−Ge−Se glasses also. It has been addressed here by carrying out detailed electrical, thermal, and spectroscopic investigations. PbxGe42-xSe58 (x = 0−20) glasses were prepared by a two stage melt-quenching process and characterized using x-ray diffraction, high-resolution electron microscropy, and energy dispersive analysis of x-rays. Thermoelectric power and high-pressure electrical resistivity have been measured. IR, Raman, and X-ray adsorption near edge structure spectroscopies have been used for examining the glass structures as well as differential scanning calorimetry (DSC) for studying the thermal properties. A structural model based on the chemical nature of the constituents has been proposed to account for the observed properties of these glasses. Effect of Pb incorporation on local structures and qualitative consequences on the energy band struct...