Transverse “resistance overshoot” in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime
Transverse “resistance overshoot” in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime
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DOI：
10.1209/epl/i2004-10454-4
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发表时间：
2005-02
期刊：
影响因子：
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通讯作者：
I. Shlimak;V. Ginodman;Alexander Gerber;A. Milner;K. Friedland;Douglas J. Paul
中科院分区：
文献类型：
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作者：
I. Shlimak;V. Ginodman;Alexander Gerber;A. Milner;K. Friedland;Douglas J. Paul
我们研究了Si/SiGe中横向霍尔电阻Rxy中“过冲”现象的特殊性。在量子霍尔效应平台的低磁场端附近，当填充因子ν接近整数i时，Rxy超过了正常的平台值h/ie2。然而，如果磁场B进一步增加，则Rxy减小到其正常值。结果表明，在所研究的n-Si/Si0.7Ge0.3样品中，几乎所有的ν都存在过冲。在不同的材料和不同的ν中观察到的超调的存在，其中相邻朗道带的分裂具有不同的特征，这暗示了这种效应的共同起源。对ν=3和ν=5有无过冲的实验曲线Rxy(ν)的比较表明，这种影响不仅存在于Rxy超过正常平台值的区域，而且存在于高原之间的整个区间。
We investigate the peculiarities of the “overshoot” phenomena in the transverse Hall resistance Rxy in Si/SiGe. Near the low magnetic-field end of the quantum Hall effect plateaus, when the filling factor ν approaches an integer i, Rxy overshoots the normal plateau value h/ie2. However, if magnetic field B increases further, Rxy decreases to its normal value. It is shown that in the investigated sample n-Si/Si0.7Ge0.3, overshoots exist for almost all ν. Existence of overshoot in Rxy observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves Rxy(ν) for ν = 3 and ν = 5 with and without overshoot showed that this effect exists in the whole interval between plateaus, not only in the region where Rxy exceeds the normal plateau value.