Properties of LuAP:Ce scintillator containing intentional impurities
Properties of LuAP:Ce scintillator containing intentional impurities
复制标题
含有故意杂质的 LuAP:Ce 闪烁体的特性
DOI：
10.1016/j.nima.2006.10.093
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发表时间：
2007
影响因子：
1.4
通讯作者：
P. Anfré
中科院分区：
文献类型：
--
作者：
A. Petrosyan;M. Derdzyan;K. Ovanesyan;P. Lecoq;E. Auffray;J. Trummer;M. Kronberger;C. Pédrini;C. Dujardin;P. Anfré
Single crystals of LuAP:Ce and LuYAP(Lu*70%):Ce co-doped with tetravalent (Hf and Zr) and pentavalent (Ta) ions were grown from melts by the Bridgman process. Underlying absorption, slope of the optical edge and transmission in the range of emission were compared to those of LuAP:Ce crystals. Absorption coefficients at 260nm less than 2cm−1have been recorded in LuAP:Ce crystals containing tetravalent ions that are lower than the corresponding figures (5–6cm−1) measured in undoped LuAP. At high concentrations of added impurities, despite of suppression of the parasitic underlying absorption below 300nm, the slope of the optical edge and transmission in the range of emission are seriously damaged. Scintillation parameters of crystals with added impurities are compared to those of LuAP:Ce.
