Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix
Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix
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DOI：
10.1063/1.3499426
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发表时间：
2010-10
影响因子：
4
通讯作者：
S. R. Pinto;A. Rolo;M. Gomes;M. Ivanda;I. Bogdanović-Radović;J. Grenzer;A. Mücklich;D. J. Barber;S. Bernstorff;Maja Buljan
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文献类型：
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作者：
S. R. Pinto;A. Rolo;M. Gomes;M. Ivanda;I. Bogdanović-Radović;J. Grenzer;A. Mücklich;D. J. Barber;S. Bernstorff;Maja Buljan
我们报道了在氧化铝基质中形成规则有序的空穴晶格，其空穴尺寸约为4 nm。这些空洞是在磁控溅射共沉积Ge+Al_2O_3的过程中，通过在氧化铝基质中自组装生长而形成的有序三维Ge量子点阵的热处理形成的。在随后的退火过程中，薄膜中的Ge原子丢失，因此产生空洞。空穴的位置与退火前存在的Ge量子点的排列方式相同，但其大小可以由沉积参数控制。
We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al2O3. During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters.