In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure
In-situ focused ion beam implantation for the fabrication of a hot electron transistor oscillator structure
复制标题
用于制造热电子晶体管振荡器结构的原位聚焦离子束注入
DOI：
10.1088/0268-1242/11/1/004
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发表时间：
1996
影响因子：
1.9
通讯作者：
G. Jones
中科院分区：
文献类型：
--
作者：
I. Kaya;M. Dellow;S. Bending;E. Linfield;P. D. Rose;D. Ritchie;G. Jones
最近的进展，使用原位聚焦离子束注入在MBE生长中断已被利用来制造平面GaAs热电子结构，而不需要浅欧姆接触。这种新的制造路线显示出非常高的产量，并已被用来演示一个原型的高频振荡器结构的基础上，在基层中的电子倍增。现有的设备显示传输因子超过单位以及反转的基极电流在高注入水平，这是振荡器动作的先决条件。未来的设备设计的改进进行了讨论。
Recent advances using in situ focused ion beam implantation during an MBE growth interruption have been exploited to fabricate planar GaAs hot electron structures without the need for shallow ohmic contacts. This novel fabrication route shows a very high yield and has been used to demonstrate a prototype high-frequency oscillator structure based on electron multiplication in the base layer. Existing devices show transfer factors in excess of unity as well as reversal of the base current at high injection levels, which are the prerequisites for oscillator action. Future improvements in device design are discussed.