Enhancing the Near-Infrared Spectral Response of Silicon Optoelectronic Devices via Up-Conversion
Enhancing the Near-Infrared Spectral Response of Silicon Optoelectronic Devices via Up-Conversion
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DOI：
10.1109/ted.2007.903197
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发表时间：
2007-09
影响因子：
3.1
通讯作者：
B. Richards;A. Shalav
中科院分区：
文献类型：
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作者：
B. Richards;A. Shalav
描述了一种对亚带隙光表现出增强的响应的硅基光电器件。该器件结构由双面硅太阳能电池组成，背面附着有上转换（UC）层。掺铒氟化钇钠（NaY0.8F4：Er0.23+）荧光粉是负责UC发光的光学活性中心。未优化的器件被证明有效地响应于1480-1580 nm范围内的波长（λ），在2.4 W/cm 2的照明强度下，在1523 nm处发生的外部量子效率（EQE）为3.4%（EQE = 1.4 × 10-2 cm 2/W）。光学损耗分析表明，在1523 nm激发2.4 W/cm 2时，该器件的发光量子效率（LQE）为16.7%（LQE = 7.0乘以10-2 cm 2/W），而进一步的潜在器件改进表明，EQE为14.0%（5.8乘以10-2 cm 2/W）实际上可以实现。
A silicon-based optoelectronic device that exhibits an enhanced response to subbandgap light is described. The device structure consists of a bifacial silicon solar cell with an up- converting (UC) layer attached to the rear. Erbium-doped sodium yttrium fluoride (NaY0.8F4 : Er0.2 3+) phosphors are the optically active centers responsible for the UC luminescence. The unoptimized device is demonstrated to respond effectively to wavelengths (lambda) in the range of 1480-1580 nm with an external quantum efficiency (EQE) of 3.4% occurring at 1523 nm at an illumination intensity of 2.4 W/cm2 (EQE = 1.4 times 10-2 cm2/W). An analysis of the optical losses reveals that the luminescence quantum efficiency (LQE) of the device is 16.7% at 2.4 W/cm2 of 1523-nm excitation (LQE = 7.0 times 10-2 cm2/W), while further potential device improvements indicate that an EQE of 14.0% (5.8 times 10-2 cm2/W) could be realistically achieved.