Two-dimensional facet crystal growth of silicon from undercooled melt of Si–Ni alloy
Two-dimensional facet crystal growth of silicon from undercooled melt of Si–Ni alloy
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DOI：
10.1016/j.msea.2006.02.360
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发表时间：
2007-03
期刊：
影响因子：
6.4
通讯作者：
Toshio Suzuki;S. Kim;W. Kim
中科院分区：
文献类型：
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作者：
Toshio Suzuki;S. Kim;W. Kim
采用相场模型研究了硅镍合金过冷熔体中硅的二维小面晶体生长。计算中采用了薄界面极限下的相场参数和埃格莱斯顿等人提出的各向异性界面能模型。计算的枝晶生长速度依赖于界面宽度，当界面Péclet数足够小时，得到正确的值。生长速度与过冷度呈幂律关系，Si-10 wt.%时，指数约为2 Ni合金和Si-20 wt.%的大约三个镍合金。枝晶生长保持其尖端形状和一个枝晶的尖端尺寸和生长速度之间的标度律被证实。在Si-6 wt.%的薄液膜中，将相场法模拟的小面枝晶生长速度与实验数据进行了比较镍合金和两者都是可以接受的协议。
The two-dimensional facet crystal growth of silicon from the undercooled melt of silicon–nickel alloys has been investigated using a phase-field model. The phase-field parameters derived at the thin interface limit and the anisotropic interface energy model proposed by Eggleston et al. have been used in the simulation. The calculated dendrite growth velocity depends on the interface width and the correct values are obtained when the interfacial Péclet number is sufficiently small. The growth velocity follows a power law relation to undercooling and the exponents are approximately two for Si–10wt.% Ni alloy and approximately three for Si–20wt.% Ni alloy. A dendrite grows maintaining its tip shape and a scaling law between the tip size of a dendrite and the growth velocity is confirmed. The phase-field simulations have been compared with the experimental data on the facet dendrite growth velocity in a thin liquid film of Si–6wt.% Ni alloy and both are acceptable in agreement.