Phonon-induced decay of a quantum-well hole: One monolayer Na on Cu(111)
Phonon-induced decay of a quantum-well hole: One monolayer Na on Cu(111)
复制标题
量子阱孔的声子诱导衰变：Cu(111) 上的单层 Na
DOI：
10.1103/physrevb.61.2343
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发表时间：
2000
影响因子：
3.7
通讯作者：
S.
中科院分区：
文献类型：
--
作者：
B. Hellsing;J. Carlsson;L. Wallden;S.
本文从理论上研究了单层Na/Cu（111）量子阱空穴的声子诱导衰减。电子-声子耦合矩阵元由第一性原理变形势和模型势波函数确定。对寿命展宽的主要贡献可以归因于覆盖层和界面区的电子-声子耦合。峰宽和温度依赖性与光电发射数据一致。
The phonon-induced decay of an overlayer quantum-well hole is investigated theoretically and considered for one monolayer of Na on Cu(111). The electron-phonon coupling matrix element is determined by a first-principles deformation potential and model potential wave functions. The main contribution to the lifetime broadening can be attributed to the electron-phonon coupling in the overlayer and interface region. Peak width and temperature dependence are consistent with photoemission data.