Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy
Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy
复制标题
磷介导分子束外延生长立方氮化镓
DOI：
10.1063/1.124100
复制
发表时间：
1999
影响因子：
4
通讯作者：
T. Seong
中科院分区：
文献类型：
--
作者：
Yang Zhao;C. Tu;I. Bae;T. Seong
采用磷介导分子束外延技术在纤锌矿蓝宝石衬底上生长GaN外延层。薄膜的特征在于反射高能电子衍射，x射线衍射，能量色散x射线光谱，和透射电子显微镜。生长温度在P掺入以及GaN结晶中起着重要作用。在生长过程中引入的磷通量导致的优先生长的锌的外延层。生长过程中的相变归因于磷通量的冲击表面化学计量的修改。
GaN epitaxial layers were grown on wurtzite GaN-on-sapphire substrates by phosphorus-mediated molecular beam epitaxy at different growth temperatures. The films were characterized by reflection high-energy electron diffraction, x-ray diffraction, energy-dispersive x-ray spectroscopy, and transmission electron microscopy. The growth temperature plays an important role in P incorporation as well as GaN crystallization. The introduction of the phosphorus flux during growth leads to a preferential growth of zinc-blende epilayers. The phase transition during growth is attributed to the modification of surface stoichiometry by the impinging phosphorus flux.