Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistors
Tunnelling- and barrier-injection transit-time mechanisms of terahertz plasma instability in high-electron mobility transistors
复制标题
高电子迁移率晶体管中太赫兹等离子体不稳定性的隧道和势垒注入渡越时间机制
DOI：
10.1088/0268-1242/17/11/306
复制
发表时间：
2002
影响因子：
1.9
通讯作者：
M. Shur
中科院分区：
文献类型：
--
作者：
V. Ryzhii;M. Shur
我们从理论上研究了类似于高电子迁移率晶体管的异质结构中的等离子体不稳定性。所考虑的不稳定性与由于隧道效应或热电子发射而从沟道注入栅极层的电子的渡越时间效应有关。自激等离子体振荡的频率落在太赫兹范围内，由通道中的电子浓度及其长度决定。我们发现通过结构参数和施加电压表达的不稳定性标准。
We study theoretically the plasma instability in a heterostructure similar to a high-electron mobility transistor. The instability under consideration is associated with the transit-time effects of the electrons injected from the channel into the gate layer due to tunnelling or thermionic emission. The frequencies of the self-excited plasma oscillations, which fall within the terahertz range, are determined by the electron concentration in the channel and its length. We find the instability criteria expressed via the structural parameters and applied voltage.