Modulating the rate of charge transport in a metal-organic framework thin film using host:guest chemistry.
Modulating the rate of charge transport in a metal-organic framework thin film using host:guest chemistry.
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DOI：
10.1039/c5cc09695b
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发表时间：
2016-01
影响因子：
4.9
通讯作者：
Idan Hod;O. Farha;J. Hupp
中科院分区：
文献类型：
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作者：
Idan Hod;O. Farha;J. Hupp
在这里，我们展示了使用主客体化学来调节金属有机框架（MOF）膜中的电荷传输速率。电荷跳跃的位点到位点的动力学，进而，二茂铁改性的MOF的整体氧化还原电导率可以通过将电子交换耦合到环糊精和通道束缚的双烯之间的包合物的氧化状态依赖性形成而改变高达30倍。
Herein we demonstrate the use of host-guest chemistry to modulate rates of charge transport in metal-organic framework (MOF) films. The kinetics of site-to-site of charge hopping and, in turn, the overall redox conductivity, of a ferrocene-modified MOF can be altered by up to 30-fold by coupling electron exchange to the oxidation-state-dependent formation of inclusion complexes between cyclodextrin and channel-tethered metallocenes.