Influence of band‐gap shrinkage on the carrier‐induced refractive index change in InGaAsP
Influence of band‐gap shrinkage on the carrier‐induced refractive index change in InGaAsP
复制标题
带隙收缩对 InGaAsP 载流子引起的折射率变化的影响
DOI：
10.1063/1.101191
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发表时间：
1989
影响因子：
4
通讯作者：
R. Baets
中科院分区：
文献类型：
--
作者：
D. Botteldooren;R. Baets
计算了高掺杂n型InGaAsP材料的耗尽引起的折射率变化。介绍了一种新的、数值上简单而精确的高载流子密度带隙收缩模型。与早期计算的结果相反，我们的结果表明折射率变化仅微弱地依赖于所使用的光波长和带隙波长之间的差异。
The refractive index change induced by depletion of highly doped n‐type InGaAsP materials is calculated. A new, numerically simple and accurate model for the high carrier density band‐gap shrinkage is introduced. In contrast to the results of earlier calculations, our results show that the refractive index change depends only weakly on the difference between the optical wavelength used and the band‐gap wavelength.