Influence of Fe–F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films
Influence of Fe–F-co-doping on the dielectric properties of Ba0.6Sr0.4TiO3 thick-films
复制标题
Fe-F共掺杂对Ba0.6Sr0.4TiO3厚膜介电性能的影响
DOI：
10.3139/146.101740
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发表时间：
2008
影响因子：
0.8
通讯作者：
J. Haußelt
中科院分区：
文献类型：
--
作者：
F. Paul;A. Giere;W. Menesklou;J. Binder;P. Scheele;R. Jakoby;J. Haußelt
摘要 研究了Fe受体和Fe-F受体-供体共掺杂对氧化铝基板上丝网印刷Ba0.6 Sr0.4 TiO3厚膜介电响应的影响。通过溶胶冷冻干燥合成Ba0.6 Sr0.4 TiO3 粉末。使用平面金属-绝缘体-金属电容器结构在 kHz 频率下以及使用共面波导结构在高达 40 GHz 的 GHz 频率下研究介电常数、介电损耗和可调谐性。研究发现，由于内部偏置场和成对的相关缺陷，Fe 纯受主掺杂对 kHz 频率和 GHz 频率下的介电常数和介电损耗因数具有明显影响。与 F 共掺杂可显着抑制低频和微波频率下内部偏置场和缺陷关联的影响。通过在厚膜中共掺杂 Fe 和 F，可以提高 10 GHz 和 Eeff = 5.8 V μm-1 下的换向品质因数。这种掺杂的 Ba0.6 Sr0.4 TiO3 薄膜在可调谐微波应用中表现出很高的潜力。
Abstract The influence of Fe acceptor and Fe – F acceptor – donor co-doping on the dielectric response of screen-printed Ba0.6 Sr0.4 TiO3 thick-films on alumina substrates has been investigated. The Ba0.6 Sr0.4 TiO3 powders were synthesized by freeze-drying of sols. Permittivity, dielectric loss, and tunability were investigated at kHz frequencies with a planar metal-insulator-metal capacitor structure, and at GHz frequencies up to 40 GHz using coplanar waveguide structures. Pure acceptor doping by Fe was found to have a distinct influence on permittivity and dielectric loss-factor at kHz-frequencies and at GHz frequencies due to an internal bias field and pairs of associated defects. Co-doping with F significantly suppresses the influence of the internal bias field and defect-associates at low and microwave frequencies. The commutation quality factor at 10 GHz and Eeff = 5.8 V μm-1 was increased by co-doping the thick-films with Fe and F. Such doped Ba0.6 Sr0.4 TiO3 films show a high potential for tunable microwave applications.