Single-photon emitting diode based on a quantum dot in a micro-pillar
Single-photon emitting diode based on a quantum dot in a micro-pillar
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基于微柱中量子点的单光子发射二极管
DOI：
10.1088/0957-4484/19/34/345401
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发表时间：
2008
期刊：
影响因子：
3.5
通讯作者：
A. Shields
中科院分区：
文献类型：
--
作者：
T. Farrow;P. See;A. J. Bennett;M. Ward;P. Atkinson;K. Cooper;D. Ellis;D. Unitt;D. Ritchie;A. Shields
我们在微柱腔中制作了一个基于量子点的单光子发射二极管。通过温度调谐点发射与腔模共振，我们看到在40 K下收集的光子强度的增强。我们在固定偏压下对电致发光进行自相关测量，观察光子反聚束。由于我们的器件的低电阻和电容，我们可以注入比量子态寿命更短的电流脉冲，产生g（2）（0）= 0.17的单光子发射。
We have fabricated a single-photon emitting diode based on a quantum dot in a micro-pillar cavity. By temperature tuning the dot emission into resonance with the cavity mode we see an enhancement in the collected photon intensity at 40 K. We perform autocorrelation measurements on the electroluminescence at fixed bias, observing photon anti-bunching. Due to the low resistance and capacitance of our device we can inject current pulses shorter than the lifetime of the quantum state, producing single-photon emission with g(2)(0) = 0.17.