Room-temperature ferromagnetism in n-type Cu-doped ZnO thin films
Room-temperature ferromagnetism in n-type Cu-doped ZnO thin films
复制标题
DOI：
10.1063/1.2764203
复制
发表时间：
2007-08
影响因子：
3.2
通讯作者：
D. Hou;X. Ye;Xunming Zhao;H. Meng;H. J. Zhou;X. L. Li;C. Zhen
中科院分区：
文献类型：
--
作者：
D. Hou;X. Ye;Xunming Zhao;H. Meng;H. J. Zhou;X. L. Li;C. Zhen
采用磁控溅射法制备了一系列n型Cu掺杂ZnO薄膜。这种薄膜在室温下表现出铁磁性。通过X射线光电子能谱法鉴定，Cu离子处于单价状态。随着Cu浓度的增加，每个Cu离子的磁矩减小。在Zn_（0.95）Cu_（0.05）O薄膜中观察到最大磁矩约为0.52 μB scinCu。Zn_（0.95）Cu_（0.05）O：N薄膜的居里温度约为360 K。为了探索铁磁性与载流子密度的关系，在样品中引入氮元素，使样品的磁化强度和转变温度降低。这些结果表明，电子密度在铁磁性中起着重要的作用。
A series of n-type Cu-doped ZnO thin films was prepared by magnetron sputtering. Such films have shown ferromagnetic properties at room temperature. The Cu ion is in a univalent state as identified by x-ray photoelectron spectroscopy. The moment per Cu ion decreases as the Cu concentration increases. The largest moment about 0.52 μB∕Cu was observed for Zn0.95Cu0.05O thin film. The Curie temperature about 360 K was observed for Zn0.95Cu0.05O:N film. To explore the relationship between ferromagnetism and carrier density, nitrogen was introduced into the samples which resulted magnetization and the transition temperature decreasing. These results indicate that the electron density plays an important role in ferromagnetism.