Precision measurement of Compton scattering in silicon with a skipper CCD for dark matter detection
Precision measurement of Compton scattering in silicon with a skipper CCD for dark matter detection
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DOI：
10.1103/physrevd.106.092001
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发表时间：
2022-07
影响因子：
5
通讯作者：
D. Norcini;N. Castello-Mor;D. Baxter;N. Corso;J. Cuevas-Zepeda;C. De Dominicis;A. Matalon;S. Munagavalasa;S. Paul;P. Privitera;K. Ramanathan;R. Šmída;R. Thomas;R. Yajur;A. Chavarria;K. McGuire;P. Mitra;A. Piers;M. Settimo;J. Gutiérrez;J. Duarte-Campderros;A. Lantero-Barreda;A. Lopez-Virto;I. Vila;R. Vilar;N. Avalos;X. Bertou;A. Dastgheibi-Fard;O. Deligny;E. Estrada;N. Gadola;R. Gaïor;T. Hossbach;L. Khalil;B. Kilminster;I. Lawson;S. Lee;A. Letessier-Selvon;P. Loaiza;G. Papadopoulos;P. Robmann;M. Traina;G. Warot;J. Zopounidis
中科院分区：
文献类型：
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作者：
D. Norcini;N. Castello-Mor;D. Baxter;N. Corso;J. Cuevas-Zepeda;C. De Dominicis;A. Matalon;S. Munagavalasa;S. Paul;P. Privitera;K. Ramanathan;R. Šmída;R. Thomas;R. Yajur;A. Chavarria;K. McGuire;P. Mitra;A. Piers;M. Settimo;J. Gutiérrez;J. Duarte-Campderros;A. Lantero-Barreda;A. Lopez-Virto;I. Vila;R. Vilar;N. Avalos;X. Bertou;A. Dastgheibi-Fard;O. Deligny;E. Estrada;N. Gadola;R. Gaïor;T. Hossbach;L. Khalil;B. Kilminster;I. Lawson;S. Lee;A. Letessier-Selvon;P. Loaiza;G. Papadopoulos;P. Robmann;M. Traina;G. Warot;J. Zopounidis
旨在通过粒子反冲直接探测暗物质的实验可以达到O（10 eV）的能量阈值。在这种情况下，来自环境γ射线的小角度康普顿散射的电离信号构成了重要的背景。用于建立背景模型的蒙特卡罗模拟尚未在这些低能量下进行实验验证。我们报告了一个精确测量的康普顿散射硅原子壳层电子下降到23 eV。为DAMIC-M实验研制的具有单电子分辨率的skipper电荷耦合器件（CCD）在几个月内暴露于241 Am γ射线源。与硅K，L 1和L 2，3壳层相关的特征被清楚地识别出艾德，并且首次在100 eV以下检测到价电子上的散射。我们发现，康普顿散射的相对论脉冲近似，这是在蒙特卡罗模拟中实现的直接检测实验中常用的，不再现低于0.5千电子伏的测量光谱。的数据是在更好的协议与从头计算最初开发的X射线吸收光谱。
Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of O (10 eV). In this regime, ionization signals from small-angle Compton scatters of environmental γ -rays constitute a significant background. Monte Carlo simulations used to build background models have not been experimentally validated at these low energies. We report a precision measurement of Compton scattering on silicon atomic shell electrons down to 23 eV. A skipper charge-coupled device (CCD) with single-electron resolution, developed for the DAMIC-M experiment, was exposed to a 241 Am γ -ray source over several months. Features associated with the silicon K, L 1 , and L 2 , 3 -shells are clearly identified, and scattering on valence electrons is detected for the first time below 100 eV. We find that the relativistic impulse approximation for Compton scattering, which is implemented in Monte Carlo simulations commonly used by direct detection experiments, does not reproduce the measured spectrum below 0.5 keV. The data are in better agreement with ab initio calculations originally developed for X-ray absorption spectroscopy.