A 2.18-pJ/conversion, 1656-μm2 Temperature Sensor With a 0.61-pJ.K2 FoM and 52-pW Stand-By Power
A 2.18-pJ/conversion, 1656-μm2 Temperature Sensor With a 0.61-pJ.K2 FoM and 52-pW Stand-By Power
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DOI：
10.1109/lssc.2020.3005784
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发表时间：
2020-01-01
影响因子：
2.7
通讯作者：
Harpe, Pieter
中科院分区：
文献类型：
--
作者：
Pelzers, Kevin;Xin, Haoming;Harpe, Pieter
本文介绍了一种微型、超低功耗、全动态温度传感器，该传感器基于占空比电阻式传感器桥和65纳米CMOS的9位异步SAR ADC。它具有新颖的浮桥技术和自动电源门控，以实现最低的功耗。它每次转换消耗2.18 pJ， RMS分辨率为0.53 K，导致FoM为0.61 pJ - K-2。52 pW的待机功率允许高功率效率，即使在低采样率。它的芯片面积为36x46 μ m，感应范围为-20℃至120℃。
This letter describes a miniature, ultra low power, all-dynamic temperature sensor based on a duty-cycled resistive transducer bridge and a 9-bit asynchronous SAR ADC in 65-nm CMOS. It features a novel floating bridge technique and automatic power gating to achieve the lowest reported power consumption. It consumes 2.18 pJ per conversion and has an RMS resolution of 0.53 K, leading to an FoM of 0.61 pJ.K-2. A standby power of 52 pW allows a high power-efficiency, even at low sample rates. It occupies 36x46 mu m of chip area and has a sensing range from -20 degrees C to 120 degrees C.