Study of growth process of germanium nanocrystals using a grazing incidence x-ray diffraction method
Study of growth process of germanium nanocrystals using a grazing incidence x-ray diffraction method
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掠入射X射线衍射法研究锗纳米晶的生长过程
DOI：
10.1116/1.590847
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
H. Morisaki
中科院分区：
文献类型：
--
作者：
Hide Ninomiya;N. Itoh;S. Rath;S. Nozaki;H. Morisaki
利用x射线掠射技术研究了锗纳米晶体在SiOx基体中的生长过程。对掺锗玻璃的XRD分析结果与拉曼光谱和x射线光电子能谱分析结果一致。结晶过程分为两个阶段：第一个阶段是600℃时锗纳米晶的成核，第二个阶段是800℃时纳米晶的生长。在第二阶段，掺锗玻璃样品中的GeOx分解为Ge和O，导致Ge纳米晶体快速生长。本文首次用XRD研究了锗纳米晶体在SiOx基体中的生长。
The growth process of germanium nanocrystals in a SiOx matrix was studied by an x-ray diffraction (XRD) technique using the grazing incidence of x rays. The conclusion based on the XRD analysis of the Ge-doped glass is in good agreement with that from Raman spectroscopy and x-ray photoelectron spectroscopy. There are two stages of crystallization: the first stage is nucleation of the Ge nanocrystals at 600 °C, and the second stage is growth of the nanocrystals at 800 °C. During the second stage, the decomposition of GeOx into Ge and O in the Ge-doped glass sample results in fast growth of Ge nanocrystals. This is the first report that studied the growth of Ge nanocrystals in an SiOx matrix by XRD.