Experimental demonstration of the MOS controlled diode (MCD)
Experimental demonstration of the MOS controlled diode (MCD)
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DOI：
10.1109/apec.2000.822831
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发表时间：
2000-02
期刊：
影响因子：
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通讯作者：
Z. Xu;B. Zhang;A.Q. Huang
中科院分区：
文献类型：
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作者：
Z. Xu;B. Zhang;A.Q. Huang
MOS控制二极管（MCD）是一种新型的功率半导体二极管，可以实现理想的二极管性能。在本文中，MCD概念的实验验证首次提出使用市售的功率MOSFET作为MCD。测量了这些MCD的反向恢复电流和反向恢复电荷，并与MOSFET的体二极管进行了比较。这些测试结果表明，这些MCD可以显着降低反向恢复电流，存储电荷和开关损耗。优化MCD性能在1.2 kV，2.4 kV和4.5 kV的数值模拟的基础上也预计。一旦开发出优化的MCD，应该获得接近器件模拟预测的MCD的理想性能。
The MOS controlled diode (MCD) is a new class of power semiconductor diode that can achieve ideal diode performance. In this paper, experimental verification of the MCD concept is presented for the first time by using commercially available power MOSFETs operating as MCDs. Measurements of the reverse recovery currents and reverse recovery charges of these MCDs are obtained and compared with the body diodes of the MOSFETs. These measurements show that these MCDs can significantly reduce the reverse recovery current, storage charge and switching loss. Optimized MCD performances at 1.2 kV, 2.4 kV and 4.5 kV are also projected based on numerical simulations. Ideal performance of the MCD close to that predicted by device simulation should be obtained once an optimized MCD is developed.