The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
The effect of the annealing temperature on the transition from conductor to semiconductor behavior in zinc tin oxide deposited atomic layer deposition
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DOI：
10.1063/1.4895102
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发表时间：
2014-09-01
影响因子：
4
通讯作者：
Park, Jin-Seong
中科院分区：
文献类型：
--
作者：
Du Ahn, Byung;Choi, Dong-won;Park, Jin-Seong
我们研究了通过原子层沉积的氧化锌锡（ZTO）薄膜的电性能，并将它们与ZnO和SnO 2薄膜作为退火温度的函数进行了比较。除了SnO 2之外，ZTO和ZnO薄膜在300 ℃以上退火时表现出从金属到半导体的电转变特性。X射线光电子能谱分析表明，当在高于400 ℃的温度下退火时，氧空位相关峰的相对面积从58%下降到41%。结合ZTO有源层的薄膜晶体管展示了13.2 cm（2）/V s的迁移率和-0.2 V的负偏置不稳定性。（C）2014 AIP Publishing LLC。
We investigated the electrical properties of zinc tin oxide (ZTO) films deposited via atomic layer deposition and compared them to ZnO and SnO2 films as a function of the annealing temperature. The ZTO and ZnO, except for SnO2, films exhibited an electrical transition from a metal to semiconductor characteristics when annealed above 300 degrees C. The X-ray photoelectron spectroscopy analyses indicate that the relative area of the oxygen vacancy-related peak decreased from 58% to 41% when annealing at temperatures above 400 degrees C. Thin film transistors incorporating ZTO active layers demonstrated a mobility of 13.2 cm(2)/V s and a negative bias instability of -0.2 V. (C) 2014 AIP Publishing LLC.