Thermal properties of charge noise sources
Thermal properties of charge noise sources
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电荷噪声源的热特性
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
P. Delsing
中科院分区：
文献类型：
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作者：
M. Gustafsson;A. Pourkabirian;G. Johansson;J. Clarke;P. Delsing
在稀释制冷机中的单电子晶体管（SET）的温度和偏置依赖性的测量表明，充电噪声线性增加与制冷机温度以上的电压依赖性阈值温度，其低温饱和是由于SET自加热。我们进一步表明，负责电荷噪声的两级微扰与SET中的电子有很强的热接触，SET中的电子可以处于比衬底高得多的温度。我们认为噪声是由SET金属和附近的势威尔斯之间的电子隧穿引起的。
Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.