Behavior of tritium release from thin boron films deposited on SS316
Behavior of tritium release from thin boron films deposited on SS316
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SS316 上沉积的硼薄膜的氚释放行为
DOI：
10.1016/j.jnucmat.2004.04.274
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
Kuniaki Watanabe
中科院分区：
文献类型：
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作者：
S. Nakagawa;M. Matsuyama;H. Kodama;Y. Oya;K. Okuno;A. Sagara;N. Noda;Kuniaki Watanabe
用等时加热和等温加热方法研究了氚注入硼薄膜的释放和扩散行为。为了比较，多晶硼板也用于相同的检查。用β射线感生X射线能谱法（BIXS）测量氚残留量随加热的变化。室温下脱附的氚大部分以HTO形式存在，在773 K时，剩余量降至初始负载量的20-30%。氚的释放符合一级反应动力学，反应速率控制步骤为扩散过程。扩散的表观活化能被确定为0.17 eV。无论是从扩散方程计算的深度分布和确定的计算机模拟的X射线光谱同意相当不错的多晶硼。
Release and diffusion behavior of tritium implanted into thin boron films were examined by isochronal and isothermal heating. For comparison, a polycrystal boron plate was also employed for the same examinations. Changes in the residual amount of tritium with heating were measured by β-ray-induced X-ray spectrometry (BIXS). Most of the tritium desorbed at room temperature was in HTO form, and the residual amount decreased to 20–30% of the initial amount loaded at 773 K. The time-course of the tritium reduction was well represented by an exponential function, suggesting that the tritium release obeys first order reaction kinetics and the rate-determining step is a diffusion process. The apparent activation energy of diffusion was determined to be 0.17 eV. Both the depth profiles calculated from a diffusion equation and determined by computer simulation of X-ray spectra agreed quite well for polycrystal boron.