Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration
Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration
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DOI：
10.7567/apex.11.101302
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发表时间：
2018-10-01
影响因子：
2.3
通讯作者：
Okumura, Hajime
中科院分区：
文献类型：
--
作者：
Matsuura, Hideharu;Takeshita, Akinobu;Okumura, Hajime
为了降低重掺Al的4H-SiC外延层的电阻率，研究了Al浓度(C-Al)在2.4×10(19)~4.7×10(29)cm(-3)之间和测量温度(T)在20~600K之间的导电机制。结果表明，对于C-Al接近3×10(19)cm(-3)的外延层，在能带和近邻跳跃导电区之间观察到了意想不到的额外导电机制，并提出了两种合理的导电模型。为了降低C-Al>；2×10(20)cm(-3)外延层的电阻率，必须制备低晶格畸变率的样品。(C)2018年日本应用物理学会
To reduce the resistivity of heavily Al-doped 4H-SiC epilayers, the conduction mechanisms were investigated for Al concentrations (C-Al) between 2.4 x 10(19) and 4.7 x 10(29) cm(-3) and measurement temperatures (T) between 20 and 600K. The results elucidated the relationship between the conduction mechanisms and the values of Tand C. For the epilayers with C-Al similar to 3 x 10(19) cm(-3), an unexpected additional conduction mechanism was observed between the band and nearest-neighbor-hopping conduction regions, for which two plausible conduction models are proposed. To reduce the resistivity of epilayers with C-Al > 2 x 10(20) cm(-3), it is essential to fabricate samples with low lattice distortion. (C) 2018 The Japan Society of Applied Physics