An SiC MESFET-Based MMIC Process
An SiC MESFET-Based MMIC Process
复制标题
DOI：
10.1109/tmtt.2006.885563
复制
发表时间：
2006-12
影响因子：
4.3
通讯作者：
M. Sudow;K. Andersson;N. Billstrom;J. Grahn;H. Hjelmgren;J. Nilsson;P. Nilsson;J. Ståhl;H. Zirath;N. Rorsman
中科院分区：
文献类型：
--
作者：
M. Sudow;K. Andersson;N. Billstrom;J. Grahn;H. Hjelmgren;J. Nilsson;P. Nilsson;J. Ståhl;H. Zirath;N. Rorsman
基于自主研制的SiC MESFET工艺，开发了单片微波集成电路（MMIC）工艺。该工艺采用微带技术，并已开发出一套完整的无源元件，包括MIM电容、螺旋电感、薄膜电阻和通孔。该工艺的潜力通过一个3GHz的8W功率放大器、一个三阶截点为38dBm的高线性度S波段混频器和一个高功率限幅器来证明
A monolithic microwave integrated circuit (MMIC) process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIM capacitors, spiral inductors, thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifier at 3 GHz, a high-linearity S-band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter