Efficient terahertz generation from van der Waals α-In2Se3
Efficient terahertz generation from van der Waals α-In2Se3
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DOI：
10.3788/col202422.013202
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发表时间：
2024
影响因子：
3.5
通讯作者：
Shijie Duan;Ming Yang;Suyuan Zhou;Longhui Zhang;Jinsen Han;Xu Sun;Guang Wang;Changqin Liu;Dongdong Kang;Xiaowei Wang;Jiahao Chen;Jiayu Dai
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文献类型：
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作者：
Shijie Duan;Ming Yang;Suyuan Zhou;Longhui Zhang;Jinsen Han;Xu Sun;Guang Wang;Changqin Liu;Dongdong Kang;Xiaowei Wang;Jiahao Chen;Jiayu Dai
二维范德华材料因其多种多样的物理性质和灵活的操作方法而引起了人们的极大关注。在各种范德华材料中，α-In_2Se_3以其本征的二维铁电性和高性能的光电性能而引人注目。然而，尽管α-In2Se3体系在太赫兹场的电控操控方面很有前途，但对太赫兹场的研究还很少。我们对不同厚度的α-In2Se3进行了研究，发现通过减小厚度可以大大提高飞秒激光脉冲产生太赫兹的效率。此外，我们还揭示了薄膜中的浪涌电流与THz辐射的耦合呈现出不同的俄歇复合模式，这有助于理解其机制，并为设计二维高效的THz器件提供了思路。
Two-dimensional (2D) van der Waals materials have attracted tremendous attention due to their versatile physical properties and flexible manipulation approaches. Among the various types of van der Waals materials, α -In 2 Se 3 is remarkable for its intrinsic 2D ferroelectricity and high-performance opto-electronic properties. However, the study of the α -In 2 Se 3 system in terahertz (THz) radiation is scarce, although it is promising for electrically controlled THz field manipulation. We investigate the α -In 2 Se 3 in different thicknesses and report that the THz generation efficiency induced by femtosecond laser pulses can be largely improved by reducing the thickness from the bulk. Furthermore, we reveal the surge current in thin film coupled with THz emission exhibits a different Auger recombination mode, which is helpful in understanding the mechanism and provides insights into the design of 2D highly efficient THz devices.