Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?
Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells?
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DOI：
10.1002/aenm.201502276
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发表时间：
2016-06-22
影响因子：
27.8
通讯作者：
Dennler, Gilles
中科院分区：
文献类型：
--
作者：
Bourdais, Stephane;Chone, Christophe;Dennler, Gilles
基于锌黄锡矿Cu 2 ZnSn（S-x，Se 1-x）（4）化合物（CZTSSe）的光伏薄膜太阳能电池已达到>12%的太阳光-电转换效率。这与Cu（In 1-y，Gay）Se-2和CdTe母体技术中已知的>20%的记录器件仍然相差甚远。选择文献中报道的>9%的CZTSSe器件进行检查，以回顾过去几年取得的进展。这些器件的开路电压（V-oc）很低，从未超过V-oc（max）的60%，这是根据肖克利-奎塞尔辐射极限（S-Q极限）预期的。阴离子（S/Se）的分布和阳离子（Cu/Zn）的障碍上的V-OC赤字和最终的光伏性能的锌黄锡矿设备的可能的作用，在这里澄清。虽然S/Se阴离子分布预期对于任何比率X都是均匀的，但是可以发现在较大面积上的一些颗粒与颗粒和其他不均匀性，如在我们的CZTSSe膜上量化的。然而，这些阴离子分布可被认为对V-oc不足具有可忽略的影响。在Cu/Zn有序侧，尽管可以观察到显著的带隙变化（>10%），但从实验设备和计算中得出类似的结论，仍然在辐射S-Q限制内。的影响和未来的改进方式进行了讨论。
Photovoltaic thin film solar cells based on kesterite Cu2ZnSn(S-x, Se1-x)(4) compounds (CZTSSe) have reached >12% sunlight-to-electricity conversion efficiency. This is still far from the >20% record devices known in Cu(In1-y,Gay)Se-2 and CdTe parent technologies. A selection of >9% CZTSSe devices reported in the literature is examined to review the progress achieved over the past few years. These devices suffer from a low open-circuit voltage (V-oc) never better than 60% of the V-oc (max), which is expected from the Shockley-Queisser radiative limit (S-Q limit). The possible role of anionic (S/Se) distribution and of cationic (Cu/Zn) disorder on the V-oc deficit and on the ultimate photovoltaic performance of kesterite devices, are clarified here. While the S/Se anionic distribution is expected to be homogeneous for any ratio x, some grain-to-grain and other non-uniformity over larger area can be found, as quantified on our CZTSSe films. Nevertheless, these anionic distributions can be considered to have a negligible impact on the V-oc deficit. On the Cu/Zn order side, even though significant bandgap changes (>10%) can be observed, a similar conclusion is brought from experimental devices and from calculations, still within the radiative S-Q limit. The implications and future ways for improvement are discussed.