Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope
Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscope
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在透射电子显微镜中通过能量色散 X 射线光谱研究的 (In)GaAs 样品的实验和理论 X 射线强度的比较
DOI：
10.1088/1742-6596/209/1/012029
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
T. Walther
中科院分区：
文献类型：
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作者：
T. Walther
在透射电子显微镜中的X射线线强度比的实验测量进行了比较，在几个数量级的样品厚度，从纳米到毫米的范围内，与蒙特-卡罗模拟使用两种不同的软件包。结果表明，定性地再现了GaAs特征X射线谱线K/L比的厚度依赖性形式，但软件包之间的数值差异很大。提出了一种改进简单的k因子方法的方案，明确考虑到即使在应用通常的吸收和荧光校正后仍然存在的厚度依赖性。这是通过线性回归在一阶近似中完成的。计算表明，在确定InGaAs样品中铟的正确浓度方面，改进了1at%。
Experimental measurements of X-ray line intensity ratios in a transmission electron microscope are compared over several orders of magnitude of sample thicknesses, from the nm- to the mm- range, with Monte-Carlo simulations using two different software packages. It is shown that the form of the thickness dependence of the K/L ratio of characteristic X-ray lines for GaAs is reproduced qualitatively, but the numerical differences between software packages are large. A scheme is presented for improving the simple k-factor method, taking explicitly into account the thickness dependence that remains even after application of the usual absorption and fluorescence corrections. This is done in first-order approximation by linear regression. The improvement in determining the correct indium concentration in specimens of InGaAs is calculated to be 1at%.
透射电子显微镜
DOI：
10.1007/978-3-319-26651-0_3
发表时间：
2016
期刊：
--
影响因子：
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作者：
Burke M
通讯作者：
Burke M