A high gravity chemical vapor deposition apparatus

A high gravity chemical vapor deposition apparatus
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一种超重力化学气相沉积装置

DOI:
10.1063/1.1148336
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发表时间:
1997
影响因子:
1.6
通讯作者:
Tetsuya Suzuki
Tetsuya Suzuki
中科院分区:
工程技术4区
文献类型:
--
作者:
Y. Abe;G. Maizza;N. Sone;Y. Nagasaka;Tetsuya Suzuki

文献摘要

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开发了一种可以制备薄膜,特别是气相薄膜的超重力离心装置。离心机设施允许处理高达100 g的高重力材料(g表示地球重力加速度)。通过微小的修改,不仅可以从气相薄膜,而且散装材料可以在该设施中生产。对于在该设备中的第一个示范性尝试,金刚石薄膜在高达100 g的高重力条件下通过直流-等离子体化学气相沉积方法生长,其中金刚石在氢气-甲烷混合物(甲烷1体积%)的气流的中等压力条件(27 kPa)下沉积在钼衬底上。本文介绍了该装置的详细结构,并给出了超重力金刚石合成的初步结果。离心机设施允许处理高达100 g的高重力材料(g表示地球重力加速度)。通过微小的修改,不仅可以从气相薄膜,而且散装材料可以在该设施中生产。对于在该设备中的第一个示范性尝试,金刚石薄膜在高达100 g的高重力条件下通过直流-等离子体化学气相沉积方法生长,其中金刚石在氢气-甲烷混合物(甲烷1体积%)的气流的中等压力条件(27 kPa)下沉积在钼衬底上。详细的设施,并介绍了在超重力金刚石合成的初步结果。
A high gravity centrifuge facility in which thin films can be produced, especially from gas phase, was developed. The centrifuge facility allows high gravity materials processing up to 100g (g denotes the terrestrial gravity acceleration). With a minor modification, not only thin films from gas phase but also bulk materials could be produced in the facility. For the first demonstrative attempt in this facility, diamond thin films were grown under high gravity conditions up to 100g by means of the direct current-plasma chemical vapor deposition method, in which diamond was deposited on a molybdenum substrate in a moderate pressure condition (27 kPa) of the gas flow of hydrogen-methane mixture (methane 1 vol %). The details of the facility are described, and the preliminary results on the high gravity diamond synthesis are presented.A high gravity centrifuge facility in which thin films can be produced, especially from gas phase, was developed. The centrifuge facility allows high gravity materials processing up to 100g (g denotes the terrestrial gravity acceleration). With a minor modification, not only thin films from gas phase but also bulk materials could be produced in the facility. For the first demonstrative attempt in this facility, diamond thin films were grown under high gravity conditions up to 100g by means of the direct current-plasma chemical vapor deposition method, in which diamond was deposited on a molybdenum substrate in a moderate pressure condition (27 kPa) of the gas flow of hydrogen-methane mixture (methane 1 vol %). The details of the facility are described, and the preliminary results on the high gravity diamond synthesis are presented.