Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
Anisotropic magnetoresistance in colossal magnetoresistive La1-xSrxMnO3 thin films
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DOI：
10.1063/1.2811919
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发表时间：
2006-03
影响因子：
3.2
通讯作者：
J. Yau;X. Hong;A. Posadas;C. Ahn;W. Gao;E. Altman;Y. Bason;L. Klein;M. Sidorov;Z. Krivokapic
中科院分区：
文献类型：
--
作者：
J. Yau;X. Hong;A. Posadas;C. Ahn;W. Gao;E. Altman;Y. Bason;L. Klein;M. Sidorov;Z. Krivokapic
我们报告了外延 La1−xSrxMnO3 (LSMO) 薄膜中各向异性磁阻 (AMR) 的磁场和温度相关测量。虽然在 3d 铁磁合金中，通过降低温度或增加磁场来增加磁化强度，从而增加 AMR，但我们发现在 LSMO 薄膜中，AMR 对磁化强度的依赖性表现出非单调行为，这在轻掺杂化合物中变得尤其明显。我们认为这种行为与这些材料表现出的不均匀性有关。
We report on magnetic field and temperature-dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1−xSrxMnO3 (LSMO) thin films. While in 3d ferromagnetic alloys increasing the magnetization, either by reducing the temperature or increasing the magnetic field, increases the AMR, we find that in LSMO films the AMR dependence on magnetization displays nonmonotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials.