Laterally-Driven Silicon RF Micro-Switch with High Isolation
Laterally-Driven Silicon RF Micro-Switch with High Isolation
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DOI：
10.1143/jjap.45.5637
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发表时间：
2006-06
影响因子：
1.5
通讯作者：
S. Kamide;Kenichiro Suzuki
中科院分区：
文献类型：
--
作者：
S. Kamide;Kenichiro Suzuki
Few researches have been so far investigated in applying lateral motional micro electro mechanical system (MEMS) structure to a micro-switch. In this paper we report on the design and fabrication of a laterally-driven silicon RF micro-switch, which is based on a capacitive-type series switch. The isolation is greatly improved by using lateral motion in mutually opposite directions. In addition, this lateral movement is effective to alleviate the adhesion of a contact area. The cooperation of electrostatic lateral force with a spring force increases the release force by 28%. The fabricated switch is expected to have the isolation of -47.6 dB at 2 GHz and the insertion loss of less than 0.2 dB. The silicon RF transmission line proposed here helps the process very easy because of keeping the overall structure simple.
