Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate
Uncooled (25-85°C) 10 Gbit/s operation of 1.3 μm-range metamorphic Fabry-Perot laser on GaAs substrate
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DOI：
10.1049/el.2009.0263
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发表时间：
2009-03-26
影响因子：
1.1
通讯作者：
Kondo, Y.
中科院分区：
文献类型：
--
作者：
Arai, M.;Tadokoro, T.;Kondo, Y.
在GaAs衬底上首次实现了1.3 μ m范围的变质激光二极管的直接调制。一个200 μ m长的设备具有低至5.2和11.4 mA的阈值电流在25和85摄氏度，分别。该激光器还实现了高达85摄氏度的10 Gbit/s直接调制。
The first direct modulation of a 1.3 mu m-range metamorphic laser diode on a GaAs substrate has been realised. A 200 mu m-long device had threshold currents as low as 5.2 and 11.4 mA at 25 and 85 degrees C, respectively. This laser also achieved 10 Gbit/s direct modulation up to 85 degrees C.