Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system
Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system
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DOI：
10.1088/1674-4926/32/1/012001
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发表时间：
2011
影响因子：
5.1
通讯作者：
M. Lockrey;M. Phillips
中科院分区：
文献类型：
--
作者：
M. Lockrey;M. Phillips
我们证明了扫描电子显微镜和阴极发光（CL）光谱映射系统相结合的能力，提供重要的空间分辨信息。使用SEM-CL系统测量跨多量子阱样品的光谱输出的不均匀性程度，以及测量随着载流子浓度增加的效率滚降。还研究了低能电子束改性对InGaN/GaN多量子阱威尔斯的影响。
We demonstrate the ability of a combined scanning electron microscope and cathodoluminescence (CL) spectral mapping system to provide important spatially resolved information. The degree of inhomogeneity in spectral output across a multi-quantum well sample is measured using the SEM-CL system as well as measuring the efficiency roll-off with increasing carrier concentration. The effects of low energy electron beam modification on the InGaN/GaN multi quantum wells have also been characterized.