Diffraction line broadening analysis if broadening is caused by both dislocations and limited crystallite size
Diffraction line broadening analysis if broadening is caused by both dislocations and limited crystallite size
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DOI：
10.6028/jres.109.005
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发表时间：
2004-01-01
影响因子：
1.5
通讯作者：
Seijbel, LJ
中科院分区：
文献类型：
--
作者：
Kamminga, JD;Seijbel, LJ
位错分布参数的测定进行了讨论，试样中的应变展宽引起的位错和尺寸展宽发生。如果应变展宽是很好地描述了一个模型，由于Wilkens，几种方法是可能的分析衍射线的展宽。在溅射沉积的镍层中，三种不同的衍射线展宽分析方法产生相同的结果。通过在300 K至500 K范围内的不同温度下退火镍层来研究镍层的再结晶。随着退火温度的升高，层的显微组织从具有小晶粒和高位错密度的显微组织，经由具有高位错密度的小晶粒和具有低位错密度的大晶粒的混合物的显微组织，变为具有大晶粒和低位错密度的显微组织。
The determination of dislocation distribution parameters is discussed for specimens where both strain broadening caused by dislocations and size broadening occur. If the strain broadening is well described by a model due to Wilkens, several methods are possible for the analysis of the broadening of diffraction lines. In sputter deposited nickel layers, three different methods for diffraction line broadening analysis yield identical results. The recrystallization of the nickel layers was investigated by annealing the layers at various temperatures in the range 300 K to 500 K. With increasing annealing temperature, the microstructure of the layers changed from a microstructure with small grains and high dislocation density, via a microstructure that is a mixture of small grains with high dislocation density and large grains with low dislocation density, to a microstructure with large grains and low dislocation density.