Tin oxide transparent thin-film transistors
Tin oxide transparent thin-film transistors
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DOI：
10.1088/0022-3727/37/20/006
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发表时间：
2004-10-21
影响因子：
3.4
通讯作者：
Keszler, DA
中科院分区：
文献类型：
--
作者：
Presley, RE;Munsee, CL;Keszler, DA
一个SnO 2透明薄膜晶体管（TTFT）的演示。通过RF磁控溅射沉积SnO 2沟道层，然后在600 ℃下在O-2中快速热退火。TTFT是高度透明的，并且通过采用非常薄的沟道层（10-20 nm）来实现增强模式行为。增强型和耗尽型器件的最大场效应迁移率分别为0.8 cm（2）V-1 s（-1）和2.0 cm（2）V-1 s（-1）。与这些器件的增强模式行为相关联的透明性质和10（5）的大漏极电流通断比可以证明对于新型气体传感器应用是有用的。
A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O-2 at 600 degreesC. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10-20 nm). Maximum field-effect mobilities of 0.8 cm(2) V-1 s(-1) and 2.0 cm(2) V-1 s(-1) are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 10(5) associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications.