Vacancy-defect semiconductor quantum dots induced an S-scheme charge transfer pathway in 0D/2D structures under visible-light irradiation
Vacancy-defect semiconductor quantum dots induced an S-scheme charge transfer pathway in 0D/2D structures under visible-light irradiation
复制标题
空位缺陷半导体量子点在可见光照射下在 0D/2D 结构中诱导 S 型电荷转移途径
DOI：
10.1016/j.apcatb.2022.121109
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发表时间：
2022-01-28
影响因子：
22.1
通讯作者：
Wu, Zhongbiao
中科院分区：
文献类型：
--
作者：
Bi, Feng;Su, Yuetan;Wu, Zhongbiao
设计具有可行的电荷转移途径的异质结是建立高效人工光系统的一个有前途的策略。阶梯结构异质结在提高光催化剂的氧化还原能力和电荷转移方面显示出巨大的潜力。本文采用多步组装方法构建了空位缺陷TiO（2）量子点和二维g-C3 N4纳米片的分级异质结。计算和实验研究表明，空位缺陷的TiO 2量子点在可见光照射下可以在0 D/2D异质结中诱导出S型电荷转移路径，大大提高了载流子的氧化还原能力，增强了界面电荷的转移和分离，促进了H2O的吸附和解离.这导致对于宽范围的碳氮化物，光催化水裂解的析氢反应（HER）增加超过10倍。所获得的值与迄今为止开发的最佳氮化碳光催化剂相比毫不逊色。
Designing heterojunctions with a feasible charge transfer pathway is a promising strategy for establishing highly efficient artificial photosystems. The step-scheme (S-scheme) heterojunction has shown considerable potential in enhancing redox ability and charge transfer of photocatalysts. Herein, a hierarchical heterojunction involving vacancy-defect TiO(2 )quantum dots (QDs) and 2D g-C3N4 nanosheets was constructed using a multi-step assembly strategy. Computational and experimental studies show that the vacancy-defect TiO2 QDs can induce an S-scheme charge transfer pathway in the 0D/2D heterojunction under visible-light irradiation, which greatly improved the redox ability of charge carriers, enhanced the charge transfer and separation at interfaces, and facilitated the H2O adsorption and dissociation. This results in over 10-fold increase in hydrogen evolution re -action (HER) of photocatalytic water splitting for a wide range of carbon nitrides. The values achieved compare favorably with the best carbon nitride photocatalysts developed to date.