A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology
A novel monolithic pixelated particle detector implemented in high-voltage CMOS technology
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DOI：
10.1016/j.nima.2007.07.115
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发表时间：
2007-12-01
影响因子：
1.4
通讯作者：
Peric, Ivan
中科院分区：
文献类型：
--
作者：
Peric, Ivan
提出了一种100%填充因子单片像素探测器的新概念。该检测是基于反向偏置二极管的耗尽区中的电荷收集。包括电荷敏感放大器、振幅放大器和数字存储元件在内的复杂像素电子器件完全放置在二极管阴极（N阱）内。一个测试芯片，包括一个小的像素矩阵和测试结构已在0.35 μ m的高压CMOS工艺制造，并成功地进行了测试。本文介绍了X射线和β放射源的电气试验和测量结果。(c)2007年由Elsevier B.V.出版。
A new concept for monolithic pixel detector with 100% fill-factor is presented. The detection is based on the charge collection in the depleted zone of the reverse biased diode. Complex pixel electronics, including charge sensitive amplifier, amplitude discriminator and digital storage element is placed completely inside the diode cathode (N-well). A test chip that comprises a small pixel matrix and test structures has been fabricated in a 0.35 mu m high-voltage CMOS process and successfully tested. The results of the electrical tests and measurements with X-ray and beta radioactive sources are presented. (c) 2007 Published by Elsevier B.V.