Preparation of Rutile TiO$_{f 2}$ Films by RF Magnetron Sputtering
Preparation of Rutile TiO$_{f 2}$ Films by RF Magnetron Sputtering
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射频磁控溅射法制备金红石型TiO$_{f 2}$薄膜
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Kouzou Tsuchida
中科院分区：
文献类型：
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作者：
K. Okimura;A. Shibata;Naohiro Maeda;K. Tachibana;Y. Noguchi;Kouzou Tsuchida
采用射频（13.56 MHz）磁控溅射法制备了TiO2薄膜。在总压为2 mTorr时，在射频功率为200 W的非加热衬底上成功地获得了100%金红石型TiO2薄膜，而在20 mTorr的压力下，成功地获得了100%锐钛型TiO2薄膜。利用光学发射光谱（OES）和Langmuir探针法测量了激发态发射的空间分布和等离子体参数。在2 mTorr的压力下，在靠近阴极表面横向磁场最大的某个径向位置产生高能电子，观察到等离子体的强局域化。实验证明，即使在室温下，冲击生长薄膜的高能物质也是金红石相形成的原因。
TiO2 films were prepared by rf (13.56 MHz) magnetron sputtering using a mixture of Ar and O2 gases. At a total pressure of 2 mTorr, 100% rutile TiO2 films were successfully obtained on non heated substrates with rf power of 200 W, while 100% anatase TiO2 films were deposited at a pressure of 20 mTorr. Spatial profiles of both emission of excited species and plasma parameters were measured by optical emission spectroscopy (OES) and the Langmuir probe method. At a pressure of 2 mTorr, it was found that high-energy electrons are generated at a certain radial position near the cathode surface where the transverse magnetic field is maximum, and the strong localization of plasma was observed. It was proven that the energetic species impinging on the growing film are responsible for the formation of the rutile phase even if the substrate is at room temperature.