Nonvolatile resistive switching in graphene oxide thin films
Nonvolatile resistive switching in graphene oxide thin films
复制标题
氧化石墨烯薄膜中的非易失性电阻开关
DOI：
10.1063/1.3271177
复制
发表时间：
2009-12-07
影响因子：
4
通讯作者：
Li, Run-Wei
中科院分区：
文献类型：
--
作者：
He, C. L.;Zhuge, F.;Li, Run-Wei
在真空过滤法制备的氧化石墨烯(GO)薄膜中观察到了可靠的、可重复的电阻开关行为。该结构的通断比约为20，保持时间大于10×10~4 S，开关阈值电压小于1V。开关效应可以通过考虑氧相关基团在氧化膜上的脱附/吸收以及顶电极的扩散来理解。我们的实验表明，GO在未来的非易失性存储器应用中具有潜在的应用价值。
Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 104 s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications.